optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue f 05/2012 page 1 of 5 silicon phototransistor and photo darlington in 1210 smd package op525, op525da, OP525F description: these devices consist of an npn silicon phototransis tor and photo darlington mounted in a miniature smd package with a 1210 size chip carrier that is compatible with most automated mounting and position sensing equipment. the op525 devices have a 1.8mm domed lens and viewing acce ptance angle of 25 with higher collector current gains due to the lenses on package. the op525 and op525da have a water clear lens that senses ambient light to higher wavelengths for applications from 450nm to 1120nm. the OP525F has a black domed lens to reduce ambient light noise. the op525 series are tested using infrared light for close corr elation with optek gaas and gaalas emitters. photo darlington devices are normally used in applicat ion where light signals are low and more current gain is needed than is possible with phototransistors . features: ? high speed and high photo sensitivity ? fast response time ? 1210 package size ? high current gain ? water clear and black lens choices ? narrow viewing receiving angle ? compatible with ir reflow soldering process ? moisture sensitivity level: msl3 op525 and OP525F op525 and op525da OP525F rohs pin # transistor 1 collector 2 emitter applications: ? non-contact position sensing ? datum detection ? machine automation ? optical encoders ? reflective and transmissive sensors part number sensor viewing angle op525 phototransistor 25o op525da photo darlington 25o OP525F phototransistor 25o ordering information
optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue f 05/2012 page 2 of 5 silicon phototransistor and photo darlington in 1210 smd package op525, op525da, OP525F op525da package dimensions recommended solder pad patterns note: dimensions mm (inches) pin # transistor 1 collector 2 emitter
optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue f 05/2012 page 3 of 5 silicon phototransistor and photo darlington in 1210 smd package op525, op525da, OP525F absolute maximum ratings (t a =25c unless otherwise noted) storage temperature range -40 o c to +100 o c operating temperature range -40 o c to +80 o c lead soldering temperature (1) 260 c collector-emitter voltage op525, OP525F op525da 30 v 35 v emitter-collector voltage 5 v power dissipation (2) op525, OP525F op525da 75 mw 100 mw collector current op525, OP525F op525da 20 ma 30 ma notes: 1. solder time less than 5 seconds at temperature extreme. 2. derate linearly at 1.33 mw/ c above 25 c. 3. light source is an unfiltered gaas led with a peak emission wavelength of 935 nm and a radiometric intensity level which var ies less than 10% over the entire lens surfac e of the phototransistor being tested. 4. to calculate typical collector dark current in a, use the formulate i ceo = 10 (0.04 t - ?) , where t a is the ambient temperature in c. electrical characteristics (t a = 25 c unless otherwise noted) symbol parameter min typ max units test conditions input diode i c(on) on-state collector current OP525F op525 op525da 2.0 1.0 10.0 - - - - - - ma v ce = 5.0 v, e e = 0.5 mw/cm 2 v ce = 5.0 v, e e = 1.5 mw/cm 2 (3) v ce = 5.0 v, e e = 0.15 mw/cm 2 (3) v ce(sat) collector-emitter sa turation voltage op525, OP525F op525da - - - - 0.4 1.7 v i c = 100 a, e e = 1.0 mw/cm 2 (3) i c = 1 ma, e e = 0.5 mw/cm 2 (3) i ceo collector-emitter dark current op525, OP525F op525da - - 100 200 na v cc = 10.0 v (4) v br(ceo) collector-emitter breakdown voltage op525, OP525F op525da 30 35 - - v i c = 100 a, e e = 0 i c = 1 ma, e e = 0 v br(eco) emitter-collector breakdown voltage op525, OP525F op525da 5 5 - - - - v i e = 100 a, e e = 0 i e = 100 a, e e = 0 t r, t f rise and fall times op525, OP525F op525da - 15 50 - - s i c = 1 ma, r l = 1k ? i c = 1 ma, r l = 1k ? 0.5 spectral bandwidth OP525F 750 - 1100 nm -
optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue f 05/2012 page 4 of 5 silicon phototransistor and photo darlington in 1210 smd package op525, op525da, OP525F op525 and op525da op525 900 1100 1000 0% 20% 40% 60% 80% 100% relative response wavelength (nm) 800 700 600 500 400 relative response vs. wavelength collector-emitter voltage?v ce (v) ee = 2.0mw/cm 2 4 3 2 1 0 0.5 0.1 3.5 3.0 2.5 2.0 1.5 collector current?i c (ma) vs collector-emiiter voltage v ce (v) ee = 1.5mw/cm 2 ee = 1.25mw/cm 2 ee = 1.0mw/cm 2 ee = 0.5mw/cm 2 collector current?i c (ma) 5 3 1 0 optical power?ee(mw/cm 2 ) 0.1 100 10 1.0 collector current?i c (ma) collector current?i c (ma) vs optical power-ee(mw/cm 2 )
optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue f 05/2012 page 5 of 5 silicon phototransistor and photo darlington in 1210 smd package op525, op525da, OP525F op525da 1 .5 .25 0 optical power?ee(mw/cm 2 ) .1 10 10 1.0 collector current?i c (ma) collector current?i c ee = 0.50mw/ 4 3 2 1 0 5 10 35 30 25 20 15 collector current?i c (ma) vs ee = 0.40mw/ ee = 0.30mw/ ee = 0.20mw/ ee = 0.10mw/ collector current?i c (ma) collector-emitter voltage?v ce OP525F relative collector current vs.irradiance sensitivity chart spectral sensitivity relative response vs. wavelength
|
